IndiumV3, Main, Repository, bibRecord, 000008

Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics

Identifieur interne : 000008 ( Main/Repository ); précédent : 000007; suivant : 000009

Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics

Auteurs : RBID : Pascal:14-0050971

Descripteurs français

Pascal (Inist)
- Arséniure d'indium, Semiconducteur III-V, Composé III-V, Arséniure de gallium, Point quantique, Nanomatériau, Propriété électronique, Propriété optique, Autoassemblage, Dispositif optoélectronique, Dépendance fréquence, Effet contrainte, Mécanisme croissance, Autoorganisation, Multicouche, Dépendance temps, Ségrégation, Cale espacement, Simulation numérique, 8107T, 8535B, 8107B, 7321, Intermélangeage.

English descriptors

KwdEn :
- Digital simulation, Electronic properties, Frequency dependence, Gallium arsenides, Growth mechanism, III-V compound, III-V semiconductors, Indium arsenides, Intermixing, Multilayers, Nanostructured materials, Optical properties, Optoelectronic devices, Quantum dots, Segregation, Self organization, Self-assembly, Spacer, Stress effects, Time dependence.

Abstract

Tailoring of electronic and optical properties of self-assembled InAs quantum dots (QDs) is a critical limit for the design of several QD-based optoelectronic devices operating in the telecom frequency range. We describe how fine control of the strain-induced surface kinetics during the growth of vertically stacked multiple layers of QDs allows for the engineering of their self-organization process. Most noticeably, this study shows that the underlying strain field induced along a QD stack can be modulated and controlled by time-dependent intermixing and segregation effects occurring after capping with a GaAs spacer. This leads to a drastic increase of the TM/TE polarization ratio of emitted light, not accessible from conventional growth parameters. Our detailed experimental measurements, supported by comprehensive multi-million atom simulations of strain, electronic and optical properties, provide in-depth analysis of the grown QD samples allowing us to give a clear picture of the atomic scale phenomena affecting the proposed growth dynamics and consequent QD polarization response.

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Pascal:14-0050971

Le document en format XML

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<author><name sortKey="Tasco, Vittorianna" uniqKey="Tasco V">Vittorianna Tasco</name>
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<country>Italie</country>
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<author><name sortKey="Usman, Muhammad" uniqKey="Usman M">Muhammad Usman</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tyndall National Institute, Lee Maltings</s1>
<s2>Dyke Parade, Cork</s2>
<s3>IRL</s3>
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<country>Irlande (pays)</country>
<wicri:noRegion>Dyke Parade, Cork</wicri:noRegion>
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<author><name sortKey="De Giorgi, Milena" uniqKey="De Giorgi M">Milena De Giorgi</name>
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<author><name sortKey="Passaseo, Adriana" uniqKey="Passaseo A">Adriana Passaseo</name>
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<front><div type="abstract" xml:lang="en">Tailoring of electronic and optical properties of self-assembled InAs quantum dots (QDs) is a critical limit for the design of several QD-based optoelectronic devices operating in the telecom frequency range. We describe how fine control of the strain-induced surface kinetics during the growth of vertically stacked multiple layers of QDs allows for the engineering of their self-organization process. Most noticeably, this study shows that the underlying strain field induced along a QD stack can be modulated and controlled by time-dependent intermixing and segregation effects occurring after capping with a GaAs spacer. This leads to a drastic increase of the TM/TE polarization ratio of emitted light, not accessible from conventional growth parameters. Our detailed experimental measurements, supported by comprehensive multi-million atom simulations of strain, electronic and optical properties, provide in-depth analysis of the grown QD samples allowing us to give a clear picture of the atomic scale phenomena affecting the proposed growth dynamics and consequent QD polarization response.</div>
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Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics

Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri